Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.0081 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 13A |
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Technical parameters/Input capacitance (Ciss): | 2610pF @15V(Vds) |
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Technical parameters/rated power (Max): | 5.7 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2500 |
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Other/Manufacturing Applications: | Power Management, Industrial |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403CDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4403CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
|||
SI4403CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4425BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
P通道30 -V (D -S )的MOSFET P-Channel 30-V (D-S) MOSFET
|
||
SI4425BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
P通道30 -V (D -S )的MOSFET P-Channel 30-V (D-S) MOSFET
|
||
SI4425DDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4425DDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4427BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
SI4427BDY-T1-E3 编带
|
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