Technical parameters/drain source resistance: | 0.019 Ω |
|
Technical parameters/dissipated power: | 1.5 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.5W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SO-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Packaging: | SO-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403CDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4403CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
|||
SI4403CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4425BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
场效应管, MOSFET, P沟道
|
||
SI4425BDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
场效应管, MOSFET, P沟道
|
||
SI4425DDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4425DDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
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