Technical parameters/drain source resistance: 0.036 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.31 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.31W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4178DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
N 通道 MOSFET，30V 至 50V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SI4178DY-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
N 通道 MOSFET，30V 至 50V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SI4178DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
N 通道 MOSFET，30V 至 50V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SI4346DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R
|
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