Technical parameters/dissipated power: 2.4W (Ta), 5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 405pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.4W (Ta), 5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4178DY-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 12A 8SO
|
|||
SI4178DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 30V 12A 8SO
|
||
SI9410BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 6.2A 8SOIC
|
||
SI9410DY
|
Vishay Intertechnology | 类似代替 |
N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistor
|
|||
SI9410DY
|
Philips | 类似代替 |
N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistor
|
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