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Model SI4178DY-T1-GE3

Description N通道30 -V （D -S ）的MOSFET N-Channel 30-V (D-S) MOSFET

Brand: VISHAY

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	5 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.017 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2.4 W
Technical parameters/threshold voltage:	2.8 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	12A
Technical parameters/Input capacitance (Ciss):	405pF @15V(Vds)
Technical parameters/rated power (Max):	5 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	5 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.55 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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