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Model SI4346DY-T1-GE3
Description Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.8  yuan 2.8yuan
5+:
$ 3.7854
25+:
$ 3.5050
50+:
$ 3.3087
100+:
$ 3.2246
500+:
$ 3.1685
2500+:
$ 3.0984
5000+:
$ 3.0704
10000+:
$ 3.0283
Quantity
5+
25+
50+
100+
500+
Price
$3.7854
$3.5050
$3.3087
$3.2246
$3.1685
Price $ 3.7854 $ 3.5050 $ 3.3087 $ 3.2246 $ 3.1685
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7065) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.019 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.31 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 5.90 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4346DY-T1-E3 SI4346DY-T1-E3 Vishay Intertechnology 类似代替 SO-8
VISHAY SI4346DY-T1-E3 晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.019 ohm, 10 V, 2 V
PDF
SI4346DY-T1-E3 SI4346DY-T1-E3 VISHAY 类似代替 SOIC-8
VISHAY SI4346DY-T1-E3 晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.019 ohm, 10 V, 2 V
PDF
SI4346DY-T1-E3 SI4346DY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI4346DY-T1-E3 晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.019 ohm, 10 V, 2 V
PDF
SI4346DY-T1-E3 SI4346DY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
VISHAY SI4346DY-T1-E3 晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.019 ohm, 10 V, 2 V
PDF

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