Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/rated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN3033LSD
|
Diodes | 功能相似 | SOIC |
DIODES INC. DMN3033LSD 晶体管, MOSFET, N沟道, 6.9 A, 30 V, 0.022 ohm, 10 V, 1 V
|
||
SI4214DDY-T1-E3
|
Vishay Semiconductor | 完全替代 |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
|||
|
|
VISHAY | 完全替代 | SOIC |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
||
SI4214DDY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
||
SI9926CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL N-CH 20V 8A 8-SOIC
|
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