Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/rated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4214DDY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
||
SI4214DDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
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