Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.016 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.50 A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN3033LSD
|
Diodes | 功能相似 | SOIC |
DIODES INC. DMN3033LSD 晶体管, MOSFET, N沟道, 6.9 A, 30 V, 0.022 ohm, 10 V, 1 V
|
||
SI4214DDY-T1-E3
|
Vishay Semiconductor | 完全替代 |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
|||
|
|
VISHAY | 完全替代 | SOIC |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
||
SI4214DDY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 8.5A 8Pin SO T/R
|
||
SI9926CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL N-CH 20V 8A 8-SOIC
|
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