Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 660pF @15V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4214DDY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
||
SI4214DDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
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