Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.1W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -7.00 A
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3469DV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
||
SI3469DV-T1-E3
|
Visay | 类似代替 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
|||
SI3469DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
||
SI3493BDV-T1-GE3
|
VISHAY | 功能相似 | TSOP-6 |
MOSFET P-CH 20V 8A 6-TSOP
|
||
|
|
Vishay Intertechnology | 功能相似 | TSOP-6 |
MOSFET P-CH 20V 8A 6-TSOP
|
||
SI3493BDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 20V 8A 6-TSOP
|
||
SI3493DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.022Ω; ID -5.3A; TSOP-6; PD 1.1W; VGS +/-8V
|
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