Technical parameters/drain source resistance: | 30 mΩ |
|
Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 5A |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/rated power (Max): | 1.14 W |
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Technical parameters/descent time: | 35 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOP-6 |
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Dimensions/Packaging: | TSOP-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO6409
|
Alpha | 功能相似 |
P沟 -20V -5.5A
|
|||
AO6409
|
Alpha & Omega Semiconductor | 功能相似 | TSOP-6 |
P沟 -20V -5.5A
|
||
SI3469DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
|
||
SI3493DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.022Ω; ID -5.3A; TSOP-6; PD 1.1W; VGS +/-8V
|
||
SI3495DV-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
|||
SI3495DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
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