Technical parameters/drain source resistance: 0.048 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -5.30 A
Technical parameters/thermal resistance: 62.5℃/W (RθJA)
Technical parameters/descent time: 130 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3.1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3469DV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
||
SI3469DV-T1-E3
|
Visay | 类似代替 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
|||
SI3469DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
|
||
SI3469DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
|
||
SI3495DV-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
|||
SI3495DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
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