Technical parameters/rated power: 1.3 W
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.5A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 1450pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 29 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3443T1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
ON SEMICONDUCTOR NTGS3443T1G 晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
|
||
SI3433CDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
P通道20 -V (D -S )的MOSFET P-Channel 20-V (D-S) MOSFET
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SI3433CDV-T1-GE3
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VISHAY | 功能相似 | TSOP-6 |
P通道20 -V (D -S )的MOSFET P-Channel 20-V (D-S) MOSFET
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