Technical parameters/drain source resistance: 31 mΩ
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1300pF @10V(Vds)
Technical parameters/dissipated power (Max): 1.6W (Ta), 3.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC602P
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC602P 晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
|
||
FDC604P
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC604P 晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
|
||
FDC638APZ
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC638APZ. 场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6
|
||
SI3445DV-T1-E3
|
VISHAY | 功能相似 | TSOP |
Trans MOSFET P-CH 8V 5.6A 6Pin TSOP T/R
|
||
SI3445DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
Trans MOSFET P-CH 8V 5.6A 6Pin TSOP T/R
|
||
SI3445DV-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET P-CH 8V 6-TSOP
|
|||
SI3445DV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 8V 6-TSOP
|
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