Technical parameters/drain source resistance: 42.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2W (Ta)
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/dissipated power (Max): 2W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3433CDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
Trans MOSFET P-CH 20V 5.2A 6Pin TSOP T/R
|
||
SI3433CDV-T1-GE3
|
VISHAY | 功能相似 | TSOP-6 |
Trans MOSFET P-CH 20V 5.2A 6Pin TSOP T/R
|
||
SI3445DV-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 8V 6-TSOP
|
|||
SI3445DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 8V 6-TSOP
|
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