Technical parameters/drain source resistance: 27.5 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.08 W
Technical parameters/threshold voltage: 900 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 72 ns
Technical parameters/Input capacitance (Ciss): 1805pF @10V(Vds)
Technical parameters/rated power (Max): 2.97 W
Technical parameters/descent time: 84 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2080 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3469DV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
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SI3469DV-T1-E3
|
Visay | 功能相似 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
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SI3469DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R
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SI3469DV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
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SI3495DV-T1-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
|||
SI3495DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 20V 5.3A 6-TSOP
|
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