Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.4 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 2.7A
Technical parameters/Input capacitance (Ciss): 370pF @50V(Vds)
Technical parameters/rated power (Max): 4.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Industrial, LED lighting, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4102DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4486EY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
||
SI4486EY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
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