Technical parameters/drain source resistance: 0.028 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.90 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review