Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/궟동: Single
Other/Case/Package: SOIC-8 Narrow
Other/Packaging: Reel
Other/Link Files 레イ류: 2.7 A
Other/ハ레イ?동항복압: 100 V
Other/게イSoft - ?동항복압: +/- 20 V
Other/동착 동: SMD/SMT
Other/력발산: 2.4 W
Other/Rain Source On 저항: 158 mOhms
Other/Soft 랜イ동터극동: N-Channel
Other/하강 Economy: 10 ns
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Delete 품카테 High speed: N-Channel MOSFETs
Other/상승クク: 10 ns
Other/Standard Pack Qty: 2500
Other/표준오프い Contact Us: 12 ns
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4102DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4486EY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
||
SI4486EY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
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