Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.021 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.8 W |
|
Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 7.90 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.55 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
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