Technical parameters/dissipated power: 2.4W (Ta), 4.8W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 370pF @50V(Vds)
Technical parameters/dissipated power (Max): 2.4W (Ta), 4.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4102DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 100V 3.8A 8-SOIC
|
||
SI4486EY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
||
SI4486EY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.021Ω; ID 5.4A; SO-8; PD 1.8W; VGS +/-20V; gFS 35S
|
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