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Model SI4102DY-T1-E3
Description MOSFET N-CH 100V 3.8A 8-SOIC
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1567) Minimum order quantity(1)
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Technical parameters/dissipated power: 2.4W (Ta), 4.8W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Input capacitance (Ciss): 370pF @50V(Vds)

Technical parameters/dissipated power (Max): 2.4W (Ta), 4.8W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4102DY-T1-GE3 SI4102DY-T1-GE3 Vishay Intertechnology 类似代替 SOIC-8
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
PDF
SI4102DY-T1-GE3 SI4102DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
PDF
SI4102DY-T1-GE3 SI4102DY-T1-GE3 VISHAY 类似代替 SOIC-8
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
PDF
SI4102DY-T1-GE3 SI4102DY-T1-GE3 Vishay Semiconductor 类似代替 SOIC
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
PDF

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