Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.045 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 860 mW
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 50 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.86 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3130NT1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
N 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTGS3446T1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
N 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
SI3442BDV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 3A 6Pin TSOP T/R
|
||
SI3442BDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET N-CH 20V 3A 6Pin TSOP T/R
|
||
SI3442BDV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 3A 6Pin TSOP T/R
|
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