Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 24 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.1 W |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Leakage source breakdown voltage: | 20 V |
|
Technical parameters/Continuous drain current (Ids): | 5.60 A |
|
Technical parameters/rise time: | 7.3 ns |
|
Technical parameters/Input capacitance (Ciss): | 935pF @16V(Vds) |
|
Technical parameters/rated power (Max): | 600 mW |
|
Technical parameters/descent time: | 7.3 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 600mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-23-6 |
|
Dimensions/Length: | 3.1 mm |
|
Dimensions/Width: | 1.7 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-23-6 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3136PT1G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
P 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review