Technical parameters/number of channels: 1
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.025 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.80 A, -5.10 A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 1901pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 48 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 700mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3130NT1G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
N 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTUD3170NZT5G
|
ON Semiconductor | 功能相似 | SOT-963-6 |
ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963
|
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