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Description ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963
Product QR code
Packaging SOT-963-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.64  yuan 1.64yuan
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  • Quantity
    Inventory(1707) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.75 Ω

 

Technical parameters/polarity:

N-Channel, Dual N-Channel

 

Technical parameters/dissipated power:

125 mW

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/Input capacitance:

12.5 pF

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Continuous drain current (Ids):

280 mA

 

Technical parameters/rise time:

25.5 ns

 

Technical parameters/Input capacitance (Ciss):

12.5pF @15V(Vds)

 

Technical parameters/rated power (Max):

125 mW

 

Technical parameters/descent time:

80 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

0.2 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-963-6

 

Dimensions/Length:

1.05 mm

 

Dimensions/Width:

0.85 mm

 

Dimensions/Height:

0.4 mm

 

Dimensions/Packaging:

SOT-963-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Portable Devices, Industrial, Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC ve

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTGS3136PT1G NTGS3136PT1G ON Semiconductor 功能相似 SOT-23-6
P 通道功率 MOSFET,20V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
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