Technical parameters/drain source resistance: 57 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.2A
Technical parameters/rise time: 50 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1670 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3442BDV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET N-CH 20V 3A 6Pin TSOP T/R
|
||
SI3442BDV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
Trans MOSFET N-CH 20V 3A 6Pin TSOP T/R
|
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