Technical parameters/dissipated power: 1.1W (Ta)
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3481DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 30V 4A 6-TSOP
|
||
SI3483CDV-T1-GE3
|
VISHAY | 功能相似 | TSOP-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Intertechnology | 功能相似 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
|||
SI3483DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Intertechnology | 功能相似 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
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