Technical parameters/drain source resistance: 35 mΩ
Technical parameters/dissipated power: 1140 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 1.14 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3481DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 30V 4A 6-TSOP
|
||
SI3483CDV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review