Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.027 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -8.00 A
Technical parameters/Input capacitance (Ciss): 1000pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/height: 1 mm
External dimensions/packaging: TSOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3481DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 30V 4A 6-TSOP
|
||
SI3483CDV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483CDV-T1-GE3
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
|||
SI3483DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review