Technical parameters/dissipated power: 4.2 W
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1000pF @15V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 4.2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC610PZ
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC610PZ 晶体管, P沟道
|
||
SI3469DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
晶体管, P沟道
|
||
SI3481DV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
MOSFET P-CH 30V 4A 6-TSOP
|
||
SI3483CDV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
Trans MOSFET P-CH 30V 6.1A 6Pin TSOP T/R
|
||
SI3483DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
||
SI3483DV-T1-E3
|
VISHAY | 类似代替 | TSOP-6 |
MOSFET P-CH 30V 4.7A 6-TSOP
|
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