Technical parameters/dissipated power: 2W (Ta), 3.2W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 610pF @10V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3443T1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
ON SEMICONDUCTOR NTGS3443T1G 晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
|
||
PMN50XP,165
|
NXP | 功能相似 | TSOP-457 |
NXP PMN50XP,165 晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
|
||
PMN50XP,165
|
Nexperia | 功能相似 | TSOP-457 |
NXP PMN50XP,165 晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
|
||
SI3443CDV-T1-E3
|
Vishay Semiconductor | 完全替代 | TSOP-6 |
MOSFET P-CH 20V 5.97A 6TSOP
|
||
SI3443CDV-T1-E3
|
VISHAY | 完全替代 | TSOP-6 |
MOSFET P-CH 20V 5.97A 6TSOP
|
||
SI3443CDV-T1-E3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
MOSFET P-CH 20V 5.97A 6TSOP
|
||
SI3451DV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Mosfet p-Ch 20V 2.8A 6-Tsop
|
||
SI3451DV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP-6 |
Mosfet p-Ch 20V 2.8A 6-Tsop
|
||
SI3451DV-T1-E3
|
VISHAY | 类似代替 | SOP |
Mosfet p-Ch 20V 2.8A 6-Tsop
|
||
SI3451DV-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 20V 2.8A 6-TSOP
|
|||
SI3867DV-T1-E3
|
Vishay Intertechnology | 功能相似 | TSOP-6 |
P通道20 -V (D -S )的MOSFET P-Channel 20-V (D-S) MOSFET
|
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