Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 250pF @10V(Vds)
Technical parameters/rated power (Max): 2.1 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3443CDV-T1-GE3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
VISHAY | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
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