Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25W (Ta), 2.1W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -2.80 A
Technical parameters/Input capacitance (Ciss): 250pF @10V(Vds)
Technical parameters/dissipated power (Max): 1.25W (Ta), 2.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3443CDV-T1-GE3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
VISHAY | 类似代替 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
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