Technical parameters/drain source resistance: 0.06 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.2 W
Technical parameters/drain source voltage (Vds): 20.0 V, -20.0 V
Technical parameters/Continuous drain current (Ids): -4.70 A, 3.90 A
Technical parameters/rise time: 59 ns
Technical parameters/Input capacitance (Ciss): 610pF @10V(Vds)
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3443CDV-T1-GE3
|
Vishay Intertechnology | 完全替代 | TSOP-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
||
SI3443CDV-T1-GE3
|
VISHAY | 完全替代 | TSOT-23-6 |
Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R
|
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