Technical parameters/drain source resistance: 117 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2304BDS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23-3 |
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2304BDS-T1-E3
|
VISHAY | 功能相似 | SOT-23-3 |
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2304BDS-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2304BDS-T1-GE3
|
Vishay Semiconductor | 功能相似 | TO-236 |
Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R
|
||
SI2304DS,215
|
NXP | 功能相似 | SOT-23-3 |
NXP SI2304DS,215 晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
|
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