Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 117 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 1.70 A
Technical parameters/rise time: 7.5 ns
Technical parameters/Input capacitance (Ciss): 195pF @10V(Vds)
Technical parameters/rated power (Max): 830 mW
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 830mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IFA | 功能相似 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
|||
IRLML0030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
||
IRLML2030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML2030TRPBF 晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
|
||
SI2304BDS-T1-GE3
|
Vishay Semiconductor | 功能相似 | TO-236 |
Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review