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Model SI2304BDS-T1-GE3
Description VISHAY SI2304BDS-T1-GE3 场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236
Product QR code
Brand: Vishay Semiconductor
Packaging TO-236
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.51  yuan 0.51yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6943) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.105 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

750 mW

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

3.20 A

 

Technical parameters/rise time:

12.5 ns

 

Technical parameters/Input capacitance (Ciss):

225pF @15V(Vds)

 

Technical parameters/descent time:

15 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

750 mW

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-236

 

Dimensions/Height:

1.02 mm

 

Dimensions/Packaging:

TO-236

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Semiconductor 功能相似 SOT-23-3
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SI2304BDS-T1-E3 SI2304BDS-T1-E3 VISHAY 功能相似 SOT-23-3
VISHAY SI2304BDS-T1-E3 场效应管, MOSFET, N沟道
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SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix 功能相似 SOT-23-3
VISHAY SI2304BDS-T1-E3 场效应管, MOSFET, N沟道
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