Technical parameters/dissipated power: 750 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 12.5 ns
Technical parameters/Input capacitance (Ciss): 225pF @15V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IFA | 功能相似 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
|||
IRLML0030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
||
IRLML2030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML2030TRPBF 晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
|
||
PMV60EN,215
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB N-CH 30V 4.7A
|
||
SI2304BDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R
|
||
|
|
Philips | 功能相似 |
N-channel enhancement mode field-effect transistor
|
|||
SI2304DS
|
VISHAY | 功能相似 | SOT-23 |
N-channel enhancement mode field-effect transistor
|
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