Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/packaging: SC-70-6
Other/궟동: Dual
Other/Case/Package: SC-70-6
Other/Packaging: Reel
Other/즈: SI19xxDx
Other/Brand: Vishay / Siliconix
Other/동착 동: SMD/SMT
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 20 ns
Other/Id - Link Files: 1.3 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 740 mW
Other/Delete 품카테 High speed: Dual MOSFETs
Other/RDs On - Drain Source 저항: 168 mOhms
Other/상승クク: 20 ns
Other/Standard Pack Qty: 3000
Other/표준오프い Contact Us: 15 ns
Other/Vds - 레イ?동항복압: 20 V
Other/Vgs - 게イプ - ?동항복압: 8 V
Other/RoHS: Compliant
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1912EDH-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-363 |
SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13A, 20V, 6Pin SOT-363
|
||
|
|
Vishay Intertechnology | 类似代替 | SOT-363-6 |
SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13A, 20V, 6Pin SOT-363
|
||
SI1922EDH-T1-GE3
|
Vishay Intertechnology | 完全替代 | SOT-363 |
VISHAY SI1922EDH-T1-GE3 Dual MOSFET, Dual N Channel, 1.3A, 20V, 0.165Ω, 4.5V, 400mV
|
||
SI1922EDH-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOT-363 |
VISHAY SI1922EDH-T1-GE3 Dual MOSFET, Dual N Channel, 1.3A, 20V, 0.165Ω, 4.5V, 400mV
|
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