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Model SI1922EDH-T1-GE3
Description
Product QR code
Brand: Vishay Intertechnology
Packaging SOT-363
Delivery time
Packaging method
Standard packaging quantity 1
1.56  yuan 1.56yuan
5+:
$ 2.1060
25+:
$ 1.9500
50+:
$ 1.8408
100+:
$ 1.7940
500+:
$ 1.7628
2500+:
$ 1.7238
5000+:
$ 1.7082
10000+:
$ 1.6848
Quantity
5+
25+
50+
100+
500+
Price
$2.1060
$1.9500
$1.8408
$1.7940
$1.7628
Price $ 2.1060 $ 1.9500 $ 1.8408 $ 1.7940 $ 1.7628
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6654) Minimum order quantity(5)
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Technical parameters/drain source resistance:

0.165 Ω

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/threshold voltage:

400 mV

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-363

 

Dimensions/Packaging:

SOT-363

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Compliant with standard/REACH SVHC version:

2014/06/16

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Semiconductor 类似代替 SOT-363
VISHAY SI1912EDH-T1-E3 双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
PDF
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Intertechnology 类似代替 SOT-363-6
VISHAY SI1912EDH-T1-E3 双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
PDF

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