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Model SI1912EDH-T1-E3
Description VISHAY SI1912EDH-T1-E3 Dual Field Effect Transistor, MOSFET, Dual N-channel, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-363
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
2.43  yuan 2.43yuan
5+:
$ 3.2765
25+:
$ 3.0338
50+:
$ 2.8639
100+:
$ 2.7911
500+:
$ 2.7425
2500+:
$ 2.6818
5000+:
$ 2.6576
10000+:
$ 2.6212
Quantity
5+
25+
50+
100+
500+
Price
$3.2765
$3.0338
$2.8639
$2.7911
$2.7425
Price $ 3.2765 $ 3.0338 $ 2.8639 $ 2.7911 $ 2.7425
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2194) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.22 Ω

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 570 mW

Technical parameters/threshold voltage: 450 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 1.28 A

Technical parameters/rise time: 85 ns

Technical parameters/descent time: 210 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-363

External dimensions/length: 2.05 mm

External dimensions/width: 1.25 mm

External dimensions/height: 0.9 mm

External dimensions/packaging: SOT-363

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Cut Tape (CT)

Other/Manufacturing Applications: Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PMGD280UN,115 PMGD280UN,115 NXP 功能相似 SOT-323-6
NXP PMGD280UN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
PDF
PMGD280UN,115 PMGD280UN,115 Nexperia 功能相似 SC-70-6
NXP PMGD280UN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
PDF
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Intertechnology 类似代替 SOT-363
VISHAY SI1922EDH-T1-GE3 场效应管, MOSFET, 双N沟道, 20V
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Semiconductor 类似代替 SOT-363
VISHAY SI1922EDH-T1-GE3 场效应管, MOSFET, 双N沟道, 20V
PDF

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