Technical parameters/number of channels: 2
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.28 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 400 mW
Technical parameters/threshold voltage: 700 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 870 mA
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 45pF @20V(Vds)
Technical parameters/rated power (Max): 400 mW
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-323-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Portable Devices, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMSF3300
|
Motorola | 功能相似 |
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 12.5mΩ
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NTUD3170NZT5G
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ON Semiconductor | 功能相似 | SOT-963-6 |
ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963
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PMGD290XN,115
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Nexperia | 类似代替 | SC-70-6 |
双 N 通道 MOSFET，Nexperia ### MOSFET 晶体管，NXP Semiconductors
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