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Model SI1922EDH-T1-GE3
Description VISHAY SI1922EDH-T1-GE3 Field effect transistor, MOSFET, dual N-channel, 20V
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-363
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0.61  yuan 0.61yuan
10+:
$ 0.8235
50+:
$ 0.7808
100+:
$ 0.7503
300+:
$ 0.7320
500+:
$ 0.7137
1000+:
$ 0.6954
2500+:
$ 0.6680
5000+:
$ 0.6619
Quantity
10+
50+
100+
300+
500+
Price
$0.8235
$0.7808
$0.7503
$0.7320
$0.7137
Price $ 0.8235 $ 0.7808 $ 0.7503 $ 0.7320 $ 0.7137
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7919) Minimum order quantity(10)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.165 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/threshold voltage: 400 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.25 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-363

External dimensions/length: 2.2 mm

External dimensions/width: 1.35 mm

External dimensions/height: 1 mm

External dimensions/packaging: SOT-363

Other/Packaging Methods: Cut Tape (CT)

Other/Manufacturing Applications: Industrial, Power Management, Portable Devices

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Semiconductor 类似代替 SOT-363
VISHAY SI1912EDH-T1-E3 双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
PDF
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Intertechnology 类似代替 SOT-363-6
VISHAY SI1912EDH-T1-E3 双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
PDF

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