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Model MRF6S21100NBR1
Description MOSFET RF N-CH 28V 23W TO272-4
Product QR code
Brand: Freescale
Packaging TO-272
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
384.04  yuan 384.04yuan
1+:
$ 441.6460
10+:
$ 430.1248
50+:
$ 421.2919
100+:
$ 418.2196
200+:
$ 415.9153
500+:
$ 412.8430
1000+:
$ 410.9228
2000+:
$ 409.0026
Quantity
1+
10+
50+
100+
200+
Price
$441.6460
$430.1248
$421.2919
$418.2196
$415.9153
Price $ 441.6460 $ 430.1248 $ 421.2919 $ 418.2196 $ 415.9153
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2552) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 28.0 V

Technical parameters/rated current: 950 mA

Technical parameters/halogen-free state: Halogen Free

Technical parameters/dissipated power: 307000 mW

Technical parameters/drain source voltage (Vds): 68 V

Technical parameters/leakage source breakdown voltage: 68 V

Technical parameters/output power: 23.0 W

Technical parameters/gain: 14.5 dB

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-272

External dimensions/length: 23.67 mm

External dimensions/width: 9.07 mm

External dimensions/height: 2.64 mm

External dimensions/packaging: TO-272

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs Information/Hong Kong Import and Export License: NLR

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S21100HSR3 MRF8S21100HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HR3 MRF8S21120HR3 Freescale 功能相似 NI-780
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HR3 MRF8S21120HR3 NXP 功能相似 NI-780H-2L
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HSR3 MRF8S21120HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF

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