Technical parameters/frequency: | 2.17 GHz |
|
Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/output power: | 24 W |
|
Technical parameters/gain: | 18.3 dB |
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Technical parameters/test current: | 700 mA |
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Technical parameters/operating temperature (Max): | 225 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/rated voltage: | 65 V |
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Technical parameters/power supply voltage: | 28 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | NI-780S |
|
Dimensions/Packaging: | NI-780S |
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Physical parameters/weight: | 4763.0 mg |
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Physical parameters/operating temperature: | -65℃ ~ 225℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF8S21100HR3
|
NXP | 完全替代 | NI-780H-2L |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HR3
|
Freescale | 完全替代 | NI-780 |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HSR3
|
NXP | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21100HSR3
|
Freescale | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
NXP | 类似代替 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
Freescale | 类似代替 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
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