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Description Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
Product QR code
Brand: NXP
Packaging NI-780H-2L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
344.74  yuan 344.74yuan
1+:
$ 396.4476
10+:
$ 386.1054
50+:
$ 378.1765
100+:
$ 375.4186
200+:
$ 373.3502
500+:
$ 370.5923
1000+:
$ 368.8686
2000+:
$ 367.1449
Quantity
1+
10+
50+
100+
200+
Price
$396.4476
$386.1054
$378.1765
$375.4186
$373.3502
Price $ 396.4476 $ 386.1054 $ 378.1765 $ 375.4186 $ 373.3502
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Stock(4484) Minimum order quantity(1)
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Technical parameters/frequency: 2.17 GHz

Technical parameters/halogen-free state: Halogen Free

Technical parameters/output power: 24 W

Technical parameters/gain: 18.3 dB

Technical parameters/test current: 700 mA

Technical parameters/operating temperature (Max): 225 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: NI-780H-2L

External dimensions/packaging: NI-780H-2L

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S21100HSR3 MRF8S21100HSR3 NXP 完全替代 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 完全替代 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HR3 MRF8S21120HR3 Freescale 类似代替 NI-780
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HR3 MRF8S21120HR3 NXP 类似代替 NI-780H-2L
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HSR3 MRF8S21120HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF

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