Technical parameters/frequency: 2.17 GHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/drain source voltage (Vds): 65 V
Technical parameters/output power: 28 W
Technical parameters/gain: 17.6 dB
Technical parameters/test current: 850 mA
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: NI-780
External dimensions/packaging: NI-780
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF8S21100HR3
|
NXP | 类似代替 | NI-780H-2L |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HR3
|
Freescale | 类似代替 | NI-780 |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HSR3
|
NXP | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21100HSR3
|
Freescale | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
NXP | 完全替代 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
Freescale | 完全替代 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
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