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Description Trans RF MOSFET N-CH 65V 3Pin NI-780 T/R
Product QR code
Packaging NI-780
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
801.17  yuan 801.17yuan
1+:
$ 913.3384
10+:
$ 881.2914
50+:
$ 877.2855
100+:
$ 873.2797
150+:
$ 866.8703
250+:
$ 861.2621
500+:
$ 855.6538
1000+:
$ 849.2444
Quantity
1+
10+
50+
100+
150+
Price
$913.3384
$881.2914
$877.2855
$873.2797
$866.8703
Price $ 913.3384 $ 881.2914 $ 877.2855 $ 873.2797 $ 866.8703
Start batch production 1+ 10+ 50+ 100+ 150+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7367) Minimum order quantity(1)
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Technical parameters/frequency: 2.17 GHz

Technical parameters/halogen-free state: Halogen Free

Technical parameters/drain source voltage (Vds): 65 V

Technical parameters/output power: 28 W

Technical parameters/gain: 17.6 dB

Technical parameters/test current: 850 mA

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: NI-780

External dimensions/packaging: NI-780

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S21100HR3 MRF8S21100HR3 NXP 类似代替 NI-780H-2L
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
PDF
MRF8S21100HR3 MRF8S21100HR3 Freescale 类似代替 NI-780
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
PDF
MRF8S21100HSR3 MRF8S21100HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 NXP 完全替代 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 Freescale 完全替代 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF

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