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Model MRF8S21120HSR3
Description Trans RF MOSFET N-CH 65V 3Pin NI-780S T/R
Product QR code
Brand: Freescale
Packaging NI-780S
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
642.05  yuan 642.05yuan
1+:
$ 731.9393
10+:
$ 706.2572
50+:
$ 703.0469
100+:
$ 699.8367
150+:
$ 694.7003
250+:
$ 690.2059
500+:
$ 685.7115
1000+:
$ 680.5751
Quantity
1+
10+
50+
100+
150+
Price
$731.9393
$706.2572
$703.0469
$699.8367
$694.7003
Price $ 731.9393 $ 706.2572 $ 703.0469 $ 699.8367 $ 694.7003
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7647) Minimum order quantity(1)
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Technical parameters/halogen-free state: Halogen Free

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: NI-780S

External dimensions/packaging: NI-780S

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF6S21050LR3 MRF6S21050LR3 Freescale 功能相似 NI-400-3
Trans RF MOSFET N-CH 68V 3Pin NI-400 T/R
PDF
MRF8S21100HSR3 MRF8S21100HSR3 NXP 类似代替 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 类似代替 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HR3 MRF8S21120HR3 Freescale 完全替代 NI-780
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HR3 MRF8S21120HR3 NXP 完全替代 NI-780H-2L
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF

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